cmos line sensor Search Results


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Hamamatsu cmos line sensor s13131-512
Schematic illustration for ultrathin SIG‐µSPEC. Light enters through a <t>silicon</t> <t>microslit,</t> passing through an index‐matched convex lens, paired plane mirrors, and SIG. The dispersed light is then focused on a <t>CMOS</t> line sensor. SIG along with the convex lens provides high angular dispersion and multispectral planar focal plane on the CMOS line sensor, substantially reducing the thickness of the microspectrometer. The unique configuration results in high resolution and uniform sensitivity for spectrum measurement.
Cmos Line Sensor S13131 512, supplied by Hamamatsu, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/cmos+line+sensor/cmos+line+sensor+s13131+512/pmc10700170-52-6-10
Average 90 stars, based on 1 article reviews
cmos line sensor s13131-512 - by Bioz Stars, 2026-10
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Schematic illustration for ultrathin SIG‐µSPEC. Light enters through a silicon microslit, passing through an index‐matched convex lens, paired plane mirrors, and SIG. The dispersed light is then focused on a CMOS line sensor. SIG along with the convex lens provides high angular dispersion and multispectral planar focal plane on the CMOS line sensor, substantially reducing the thickness of the microspectrometer. The unique configuration results in high resolution and uniform sensitivity for spectrum measurement.

Journal: Advanced Science

Article Title: Fully Integrated Ultrathin Solid Immersion Grating Microspectrometer for Handheld Visible and Near‐Infrared Spectroscopic Applications

doi: 10.1002/advs.202304320

Figure Lengend Snippet: Schematic illustration for ultrathin SIG‐µSPEC. Light enters through a silicon microslit, passing through an index‐matched convex lens, paired plane mirrors, and SIG. The dispersed light is then focused on a CMOS line sensor. SIG along with the convex lens provides high angular dispersion and multispectral planar focal plane on the CMOS line sensor, substantially reducing the thickness of the microspectrometer. The unique configuration results in high resolution and uniform sensitivity for spectrum measurement.

Article Snippet: The silicon microslit with PM2 and CMOS line sensor (S13131‐512, Hamamatsu Photonic) were mounted on the printed circuit board (PCB).

Techniques: Dispersion

Fully‐packaged SIG‐µSPEC. a) The microfabrication procedure of microslit and SIG. Silicon microslit is fabricated by using wet etching, low‐pressure chemical vapor deposition, deep reactive ion etching, and aluminum deposition. The SIG is separately fabricated by using wafer stepper lithography, plasma enhanced chemical vapor deposition, reactive ion etching, and aluminum deposition. b) A top‐view SEM image of a microslit and a focused ion beam SEM image of the SIG. The microslit has a rectangular aperture of 25 µm × 300 µm, and the SIG has a binary‐phase configuration (period: 1.25 µm, duty cycle: 0.4, height: 100 nm). c) Reflection of the SIG at different illumination angles. d) Micro‐assembled module package of the SIG‐µSPEC, consisting of two primary components: the PCB of a CMOS line sensor, silicon microslit, and PM2, and the diffraction body containing the SIG, PM1, and plano‐convex BK‐7 lens. (e) An optical image of fully‐packaged SIG‐µSPEC with a physical dimension of 8 mm × 12.5 mm × 15 mm.

Journal: Advanced Science

Article Title: Fully Integrated Ultrathin Solid Immersion Grating Microspectrometer for Handheld Visible and Near‐Infrared Spectroscopic Applications

doi: 10.1002/advs.202304320

Figure Lengend Snippet: Fully‐packaged SIG‐µSPEC. a) The microfabrication procedure of microslit and SIG. Silicon microslit is fabricated by using wet etching, low‐pressure chemical vapor deposition, deep reactive ion etching, and aluminum deposition. The SIG is separately fabricated by using wafer stepper lithography, plasma enhanced chemical vapor deposition, reactive ion etching, and aluminum deposition. b) A top‐view SEM image of a microslit and a focused ion beam SEM image of the SIG. The microslit has a rectangular aperture of 25 µm × 300 µm, and the SIG has a binary‐phase configuration (period: 1.25 µm, duty cycle: 0.4, height: 100 nm). c) Reflection of the SIG at different illumination angles. d) Micro‐assembled module package of the SIG‐µSPEC, consisting of two primary components: the PCB of a CMOS line sensor, silicon microslit, and PM2, and the diffraction body containing the SIG, PM1, and plano‐convex BK‐7 lens. (e) An optical image of fully‐packaged SIG‐µSPEC with a physical dimension of 8 mm × 12.5 mm × 15 mm.

Article Snippet: The silicon microslit with PM2 and CMOS line sensor (S13131‐512, Hamamatsu Photonic) were mounted on the printed circuit board (PCB).

Techniques: Clinical Proteomics